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IPB024N08N5ATMA1

Infineon Technologies

IPB024N08N5ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Jesd30 Code
R-PSSO-G2
REACH Uyumluluk Kodu
not_compliant
Power Dissipation Max
214W Tc
Nem Hassasiyeti (MSL)
1 (Unlimited)
Number Of Elements
1
Ambalaj
Tape & Reel (TR)
Yayın Yılı
2013
Weight
3.949996g
Seri
OptiMOS™
Vgsth Max Id
3.8V @ 154μA
RoHS Durumu
ROHS3 Compliant
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Sayısı
2
Çalışma Sıcaklığı
-55°C~175°C TJ
Gate Charge Qg Max Vgs
123nC @ 10V
Turn Off Delay Time
46 ns
Number Of Channels
1
Gate To Source Voltage Vgs
20V
Input Capacitance Ciss Max Vds
8970pF @ 40V
Terminal Formu
GULL WING
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Current Continuous Drain Id25
120A Tc
Montaj
Surface Mount
Rise Time
14ns
Rds On Max Id Vgs
2.4m Ω @ 100A, 10V
Transistor Application
SWITCHING
Continuous Drain Current Id
120A
Pulsed Drain Currentmax Idm
480A
Operating Mode
ENHANCEMENT MODE
Fabrika Tedarik Süresi
13 Weeks
Fall Time Typ
15 ns
Drainsource On Resistancemax
0.0024Ohm
Kurşunsuz
Contains Lead
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
ECCN Kodu
EAR99
Halogen Free
Halogen Free
Avalanche Energy Rating Eas
374 mJ
Fet Type
N-Channel
Drive Voltage Max Rds On Min Rds On
6V 10V
Montaj Tipi
Surface Mount

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