IPB020N10N5ATMA1

Specifications

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.002Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Fall Time Typ

29 ns

Fabrika Tedarik Süresi

13 Weeks

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

210nC @ 10V

Turn Off Delay Time

77 ns

Number Of Channels

1

Drain To Source Breakdown Voltage

100V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Seri

OptiMOS™

Vgsth Max Id

3.8V @ 270μA

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Pulsed Drain Currentmax Idm

480A

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

2m Ω @ 100A, 10V

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Halogen Free

Halogen Free

Power Dissipation

375W

Max Dual Supply Voltage

100V

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

33 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Avalanche Energy Rating Eas

979 mJ

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

15600pF @ 50V

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ