IPB019N08N3GATMA1

Specifications

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2008

Threshold Voltage

2.8V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~175°C TJ

Max Junction Temperature Tj

175°C

Input Capacitance Ciss Max Vds

14200pF @ 40V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Kurşunsuz Kodu

no

Montaj

Surface Mount

Rise Time

73ns

Pin Sayısı

7

Continuous Drain Current Id

180A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

300W

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

6V 10V

Case Connection

DRAIN

Yükseklik

4.5mm

Turn On Delay Time

28 ns

Max Dual Supply Voltage

80V

Jesd30 Code

R-PSSO-G6

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Seri

OptiMOS™

Vgsth Max Id

3.5V @ 270μA

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

Number Of Channels

1

Gate Charge Qg Max Vgs

206nC @ 10V

Turn Off Delay Time

86 ns

Drain To Source Breakdown Voltage

80V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Current Continuous Drain Id25

180A Tc

Rds On Max Id Vgs

1.9m Ω @ 100A, 10V