IPB017N10N5LFATMA1

Specifications

Avalanche Energy Rating Eas

979 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Yükseklik

4.5mm

Turn On Delay Time

7 ns

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

13 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Dissipation

313W

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

1.7m Ω @ 100A, 10V

Current Continuous Drain Id25

180A Tc

Pulsed Drain Currentmax Idm

720A

Continuous Drain Current Id

31A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSSO-G6

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

313W Tc

Seri

OptiMOS™-5

Yayın Yılı

2013

Vgsth Max Id

4.1V @ 270μA

Terminal Sayısı

6

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Max Junction Temperature Tj

150°C

Number Of Channels

1

Turn Off Delay Time

128 ns

Gate Charge Qg Max Vgs

195nC @ 10V

Drain To Source Breakdown Voltage

100V