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IPB017N10N5ATMA1

Infineon Technologies

IPB017N10N5ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Power Dissipation
375W
Halogen Free
Halogen Free
Max Dual Supply Voltage
100V
Case Connection
DRAIN
Yükseklik
4.5mm
Turn On Delay Time
33 ns
Element Configuration
Single
Drive Voltage Max Rds On Min Rds On
6V 10V
Terminal Kaplaması
Tin (Sn)
Terminal Formu
GULL WING
Input Capacitance Ciss Max Vds
15600pF @ 50V
Gate To Source Voltage Vgs
20V
Terminal Sayısı
6
RoHS Durumu
ROHS3 Compliant
Çalışma Sıcaklığı
-55°C~175°C TJ
Max Junction Temperature Tj
175°C
Weight
1.59999g
Yayın Yılı
2004
JESD-609 Kodu
e3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
375W Tc
Continuous Drain Current Id
273A
Pin Sayısı
7
Operating Mode
ENHANCEMENT MODE
Montaj
Surface Mount
Rise Time
23ns
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz
Contains Lead
ECCN Kodu
EAR99
Fall Time Typ
27 ns
Fabrika Tedarik Süresi
13 Weeks
Vgs Max
±20V
Transistor Element Material
SILICON
Parça Durumu
Active
Fet Type
N-Channel
Montaj Tipi
Surface Mount
Number Of Channels
1
Gate Charge Qg Max Vgs
210nC @ 10V
Turn Off Delay Time
80 ns
Drain To Source Breakdown Voltage
100V

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