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IPB015N08N5ATMA1

Infineon Technologies

IPB015N08N5ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Halogen Free
Halogen Free
Power Dissipation
375W
Max Dual Supply Voltage
80V
Yükseklik
4.5mm
Case Connection
DRAIN
Element Configuration
Single
Turn On Delay Time
33 ns
Drive Voltage Max Rds On Min Rds On
6V 10V
Gate To Source Voltage Vgs
20V
Terminal Formu
GULL WING
Input Capacitance Ciss Max Vds
16900pF @ 40V
RoHS Durumu
ROHS3 Compliant
Terminal Sayısı
6
Max Junction Temperature Tj
175°C
Çalışma Sıcaklığı
-55°C~175°C TJ
Yayın Yılı
2013
Weight
1.59999g
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
375W Tc
Continuous Drain Current Id
180A
Pin Sayısı
7
Operating Mode
ENHANCEMENT MODE
Kurşunsuz Kodu
yes
Montaj
Surface Mount
Rise Time
32ns
Kurşunsuz
Contains Lead
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
ECCN Kodu
EAR99
Fall Time Typ
28 ns
Fabrika Tedarik Süresi
13 Weeks
Vgs Max
±20V
Parça Durumu
Active
Transistor Element Material
SILICON
Fet Type
N-Channel
Montaj Tipi
Surface Mount
Turn Off Delay Time
83 ns
Gate Charge Qg Max Vgs
222nC @ 10V
Number Of Channels
1
Drain To Source Breakdown Voltage
80V
Kılıf / Paket
TO-263-7, D2Pak (6 Leads + Tab)

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