IPB009N03LGATMA1

Specifications

Additional Feature

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Power Dissipation

250W

Case Connection

DRAIN

Turn On Delay Time

26 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yayın Yılı

2008

Drain To Source Voltage Vdss

30V

JESD-609 Kodu

e3

Power Dissipation Max

250W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

25000pF @ 15V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~175°C TJ

Pin Sayısı

7

Continuous Drain Current Id

180A

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

no

Montaj

Surface Mount

Rise Time

14ns

Fall Time Typ

22 ns

Fabrika Tedarik Süresi

39 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jedec95 Code

TO-263AA

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Seri

OptiMOS™

Vgsth Max Id

2.2V @ 250μA

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G6

Terminal Pozisyonu

SINGLE

Number Of Elements

1