IPAW60R600CEXKSA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.6Ohm

Fabrika Tedarik Süresi

18 Weeks

Fet Feature

Super Junction

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Çalışma Sıcaklığı

-40°C~150°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

444pF @ 100V

Gate Charge Qg Max Vgs

20.5nC @ 10V

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

28W Tc

Reach Svhc

No SVHC

Threshold Voltage

3V

Vgsth Max Id

3.5V @ 200μA

Drain To Source Voltage Vdss

600V

Seri

CoolMOS™

Yayın Yılı

2013

Transistor Application

SWITCHING

Current Continuous Drain Id25

10.3A Tc

Montaj

Through Hole

Rds On Max Id Vgs

600m Ω @ 2.4A, 10V

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

600V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

19A

Continuous Drain Current Id

10.3A