IPAN70R600P7SXKSA1

Specifications

Fabrika Tedarik Süresi

18 Weeks

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.6Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

ISOLATED

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±16V

Transistor Element Material

SILICON

Yüzey Montaj

NO

Parça Durumu

Active

Vgsth Max Id

3.5V @ 90μA

Drain To Source Voltage Vdss

700V

Seri

CoolMOS™ P7

Yayın Yılı

2014

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

JESD-609 Kodu

e3

Number Of Elements

1

Nem Hassasiyeti (MSL)

Not Applicable

Power Dissipation Max

24.9W Tc

Jesd30 Code

R-PSFM-T3

Input Capacitance Ciss Max Vds

364pF @ 400V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

10.5nC @ 10V

Çalışma Sıcaklığı

-40°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

20.5A

Transistor Application

SWITCHING

Rds On Max Id Vgs

600m Ω @ 1.8A, 10V

Current Continuous Drain Id25

8.5A Tc

Ds Breakdown Voltagemin

700V