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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Current Continuous Drain Id25
- 10.1A Tc
- Rds On Max Id Vgs
- 650m Ω @ 2.1A, 10V
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 650V
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 10.1A
- Pulsed Drain Currentmax Idm
- 18A
- Power Dissipation Max
- 28W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Ambalaj
- Tube
- Terminal Pozisyonu
- SINGLE
- Jesd30 Code
- R-PSFM-T3
- Vgsth Max Id
- 3.5V @ 210μA
- Drain To Source Voltage Vdss
- 650V
- Yayın Yılı
- 2013
- Seri
- CoolMOS™
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-220-3 Full Pack
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 440pF @ 100V
- Gate Charge Qg Max Vgs
- 23nC @ 10V
- Terminal Kaplaması
- Tin (Sn)
- Montaj Tipi
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fet Type
- N-Channel
- Avalanche Energy Rating Eas
- 142 mJ
- Case Connection
- ISOLATED
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Vgs Max
- ±20V
- Fabrika Tedarik Süresi
- 18 Weeks
- Fet Feature
- Super Junction
- Configuration
- SINGLE WITH BUILT-IN DIODE
- ECCN Kodu
- EAR99
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