IPAN65R650CEXKSA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

10.1A Tc

Rds On Max Id Vgs

650m Ω @ 2.1A, 10V

Montaj

Through Hole

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

650V

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

10.1A

Pulsed Drain Currentmax Idm

18A

Power Dissipation Max

28W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSFM-T3

Vgsth Max Id

3.5V @ 210μA

Drain To Source Voltage Vdss

650V

Yayın Yılı

2013

Seri

CoolMOS™

Çalışma Sıcaklığı

-40°C~150°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

440pF @ 100V

Gate Charge Qg Max Vgs

23nC @ 10V

Terminal Kaplaması

Tin (Sn)

Montaj Tipi

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

142 mJ

Case Connection

ISOLATED

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fabrika Tedarik Süresi

18 Weeks

Fet Feature

Super Junction

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99