IPA80R450P7XKSA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

29A

Continuous Drain Current Id

11A

Transistor Application

SWITCHING

Current Continuous Drain Id25

11A Tc

Rds On Max Id Vgs

450m Ω @ 4.5A, 10V

Montaj

Through Hole

Ds Breakdown Voltagemin

800V

Kurşunsuz Kodu

yes

Vgsth Max Id

3.5V @ 220μA

Drain To Source Voltage Vdss

800V

Seri

CoolMOS™

Yayın Yılı

2013

Number Of Elements

1

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Power Dissipation Max

29W Tc

Nem Hassasiyeti (MSL)

Not Applicable

Jesd30 Code

R-PSFM-T3

Input Capacitance Ciss Max Vds

770pF @ 500V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

24nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

RoHS Durumu

ROHS3 Compliant

Case Connection

ISOLATED

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

29 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Fet Feature

Super Junction

Fabrika Tedarik Süresi

18 Weeks

Jedec95 Code

TO-220AB

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED