IPA80R280P7XKSA1

Specifications

Yüzey Montaj

NO

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

43 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

ISOLATED

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Drainsource On Resistancemax

0.28Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Fet Feature

Super Junction

Rds On Max Id Vgs

280m Ω @ 7.2A, 10V

Current Continuous Drain Id25

17A Tc

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

800V

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

45A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

1200pF @ 500V

Gate Charge Qg Max Vgs

36nC @ 10V

Terminal Kaplaması

Tin (Sn)

Nem Hassasiyeti (MSL)

Not Applicable

Power Dissipation Max

30W Tc

JESD-609 Kodu

e3

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Jesd30 Code

R-PSFM-T3

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 360μA