IPA80R1K4CEXKSA2

Specifications

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

12A

Continuous Drain Current Id

3.9A

Transistor Application

SWITCHING

Montaj

Through Hole

Rds On Max Id Vgs

1.4 Ω @ 2.3A, 10V

Current Continuous Drain Id25

3.9A Tc

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

570pF @ 100V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

23nC @ 10V

Çalışma Sıcaklığı

-40°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3 Full Pack

Terminal Sayısı

3

Vgsth Max Id

3.9V @ 240μA

Seri

CoolMOS™

Yayın Yılı

2008

JESD-609 Kodu

e3

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Power Dissipation Max

31W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSFM-T3

Vgs Max

±20V

Max Dual Supply Voltage

800V

Transistor Element Material

SILICON

Parça Durumu

Active

Case Connection

ISOLATED

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

170 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

TO-220AB

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free