IPA65R600E6XKSA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Current Continuous Drain Id25

7.3A Tc

Rds On Max Id Vgs

600m Ω @ 2.1A, 10V

Montaj

Through Hole

Rise Time

8ns

Continuous Drain Current Id

7.3A

Pin Sayısı

3

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

JESD-609 Kodu

e3

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

28W Tc

Seri

CoolMOS™

Yayın Yılı

2008

Vgsth Max Id

3.5V @ 210μA

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3 Full Pack

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

64 ns

Gate Charge Qg Max Vgs

23nC @ 10V

Input Capacitance Ciss Max Vds

440pF @ 100V

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Through Hole

Case Connection

ISOLATED

Turn On Delay Time

10 ns

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Max Dual Supply Voltage

650V

Vgs Max

±20V

Fall Time Typ

11 ns