IPA65R400CEXKSA1

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

215 mJ

Montaj Tipi

Through Hole

Case Connection

ISOLATED

Transistor Element Material

SILICON

Parça Durumu

Active

Max Dual Supply Voltage

650V

Vgs Max

±20V

Fabrika Tedarik Süresi

18 Weeks

Fet Feature

Super Junction

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.4Ohm

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Montaj

Through Hole

Rds On Max Id Vgs

400m Ω @ 3.2A, 10V

Pulsed Drain Currentmax Idm

30A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Power Dissipation Max

31W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™

Yayın Yılı

1999

Vgsth Max Id

3.5V @ 320μA

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3 Full Pack

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)