IPA65R1K5CEXKSA1

Specifications

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Yayın Yılı

2013

Max Dual Supply Voltage

650V

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-220-3 Full Pack

Continuous Drain Current Id

5.2A

Gate Charge Qg Max Vgs

10.5nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Case Connection

ISOLATED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

8.3A

Halogen Free

Halogen Free

Montaj

Through Hole

Number Of Elements

1

Input Capacitance Ciss Max Vds

225pF @ 100V

Current Continuous Drain Id25

5.2A Tc

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Vgsth Max Id

3.5V @ 130μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Avalanche Energy Rating Eas

26 mJ

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-40°C~150°C TJ

Seri

CoolMOS™

Rds On Max Id Vgs

1.5 Ω @ 1A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)