IPA65R150CFDXKSA1

Specifications

Power Dissipation Max

34.7W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

150m Ω @ 9.3A, 10V

Turn On Delay Time

12.4 ns

Vgs Max

±20V

Vgsth Max Id

4.5V @ 1mA

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

22.4A Tc

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

72A

Halogen Free

Halogen Free

Gate Charge Qg Max Vgs

86nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Max Dual Supply Voltage

650V

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.15Ohm

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™

Avalanche Energy Rating Eas

614 mJ

Terminal Pozisyonu

SINGLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2340pF @ 100V

Pin Sayısı

3

Montaj Tipi

Through Hole

Turn Off Delay Time

52.8 ns

Number Of Elements

1

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED