IPA65R045C7XKSA1

Specifications

Yayın Yılı

2008

Fall Time Typ

7 ns

Drainsource On Resistancemax

0.045Ohm

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Fet Type

N-Channel

Case Connection

ISOLATED

Gate Charge Qg Max Vgs

93nC @ 10V

Rise Time

14ns

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

18A

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-220-3 Full Pack

Max Dual Supply Voltage

650V

Parça Durumu

Active

Kurşunsuz

Lead Free

Configuration

SINGLE WITH BUILT-IN DIODE

Halogen Free

Halogen Free

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

212A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Through Hole

Number Of Elements

1

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

82 ns

Pin Sayısı

3

Transistor Element Material

SILICON

Current Continuous Drain Id25

18A Tc

Input Capacitance Ciss Max Vds

4340pF @ 400V

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

4V @ 1.25mA

Seri

CoolMOS™ C7

Çalışma Sıcaklığı

-55°C~150°C TJ

Rds On Max Id Vgs

45m Ω @ 24.9A, 10V

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

249 mJ