IPA60R650CEXKSA1

Specifications

Vgsth Max Id

3.5V @ 200μA

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn Off Delay Time

58 ns

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Pin Sayısı

3

Transistor Element Material

SILICON

Current Continuous Drain Id25

7A Tc

Input Capacitance Ciss Max Vds

440pF @ 100V

Weight

2.299997g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Element Configuration

Single

Power Dissipation Max

28W Tc

Vgs Max

±20V

Turn On Delay Time

10 ns

Rds On Max Id Vgs

650m Ω @ 2.4A, 10V

Çalışma Sıcaklığı

-40°C~150°C TJ

Seri

CoolMOS™ CE

Transistor Application

SWITCHING

Continuous Drain Current Id

7A

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Max Dual Supply Voltage

600V

Case Connection

ISOLATED

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

20.5nC @ 10V

Rise Time

8ns

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Fet Type

N-Channel

ECCN Kodu

EAR99

Yayın Yılı

2014

Drain To Source Breakdown Voltage

650V

Drainsource On Resistancemax

0.65Ohm