IPA60R600P7XKSA1

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Channels

1

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Max Junction Temperature Tj

150°C

Yükseklik

20.7mm

Number Of Elements

1

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Drain To Source Breakdown Voltage

600V

Yayın Yılı

2014

Yüzey Montaj

NO

Drainsource On Resistancemax

0.6Ohm

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

6A

Kılıf / Paket

TO-220-3 Full Pack

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

ISOLATED

Gate Charge Qg Max Vgs

9nC @ 10V

Power Dissipation

21W

Fabrika Tedarik Süresi

18 Weeks

Turn On Delay Time

7 ns

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™ P7

Rds On Max Id Vgs

600m Ω @ 1.7A, 10V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

Not Applicable

Ambalaj

Tube

Power Dissipation Max

21W Tc

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

37 ns

Input Capacitance Ciss Max Vds

363pF @ 400V

Current Continuous Drain Id25

6A Tc

Transistor Element Material

SILICON