IPA60R600P6XKSA1

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

18A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Number Of Elements

1

Montaj

Through Hole

Fet Type

N-Channel

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.6Ohm

Fall Time Typ

14 ns

Yayın Yılı

2008

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Max Dual Supply Voltage

600V

Continuous Drain Current Id

7.3A

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

12nC @ 10V

Rise Time

7ns

Case Connection

ISOLATED

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Turn On Delay Time

11 ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

600m Ω @ 2.4A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™ P6

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

28W Tc

Ambalaj

Tube

Pin Sayısı

3

Transistor Element Material

SILICON

Current Continuous Drain Id25

4.9A Tc

Input Capacitance Ciss Max Vds

557pF @ 100V

Montaj Tipi

Through Hole