IPA60R360P7XKSA1

Specifications

Jedec95 Code

TO-220AB

Fet Type

N-Channel

ECCN Kodu

EAR99

Yayın Yılı

2014

Drainsource On Resistancemax

0.36Ohm

Yüzey Montaj

NO

Drain To Source Voltage Vdss

650V

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

ISOLATED

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

13nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

26A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Ds Breakdown Voltagemin

600V

Number Of Elements

1

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

555pF @ 400V

Current Continuous Drain Id25

9A Tc

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Kurşunsuz Kodu

yes

Vgsth Max Id

4V @ 140μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

27 mJ

Rds On Max Id Vgs

360m Ω @ 2.7A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™ P7

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Power Dissipation Max

22W Tc