IPA60R360P7SXKSA1

Specifications

Fet Type

N-Channel

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Yüzey Montaj

NO

Drainsource On Resistancemax

0.36Ohm

Yayın Yılı

2014

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Drain To Source Voltage Vdss

600V

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

13nC @ 10V

Case Connection

ISOLATED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

26A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Ds Breakdown Voltagemin

600V

Number Of Elements

1

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

9A Tc

Input Capacitance Ciss Max Vds

555pF @ 400V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Vgsth Max Id

4V @ 140μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

27 mJ

Transistor Application

SWITCHING

Rds On Max Id Vgs

360m Ω @ 2.7A, 10V

Seri

CoolMOS™ P7

Çalışma Sıcaklığı

-40°C~150°C TJ

Nem Hassasiyeti (MSL)

Not Applicable

Power Dissipation Max

22W Tc

Ambalaj

Tube