IPA60R1K0CEXKSA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

3.5V @ 130μA

Input Capacitance Ciss Max Vds

280pF @ 100V

Current Continuous Drain Id25

6.8A Tc

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSFM-T3

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

26W Tc

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Super Junction

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-40°C~150°C TJ

Seri

CoolMOS™

Rds On Max Id Vgs

1 Ω @ 1.5A, 10V

Avalanche Energy Rating Eas

46 mJ

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

13nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Case Connection

ISOLATED

Max Dual Supply Voltage

600V

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-220-3 Full Pack

Continuous Drain Current Id

6.8A

Drainsource On Resistancemax

1Ohm

Yayın Yılı

2013

ECCN Kodu

EAR99

Fet Type

N-Channel

JESD-609 Kodu

e3

Jedec95 Code

TO-220AB

Montaj

Through Hole

Number Of Elements

1

Drive Voltage Max Rds On Min Rds On

10V