IPA60R180P7SXKSA1

Specifications

Yayın Yılı

2014

Yüzey Montaj

NO

Drainsource On Resistancemax

0.18Ohm

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Fet Type

N-Channel

Case Connection

ISOLATED

Gate Charge Qg Max Vgs

25nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

600V

Kılıf / Paket

TO-220-3 Full Pack

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Pulsed Drain Currentmax Idm

53A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Ds Breakdown Voltagemin

600V

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Current Continuous Drain Id25

18A Tc

Input Capacitance Ciss Max Vds

1081pF @ 400V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

4V @ 280μA

Seri

CoolMOS™ P7

Çalışma Sıcaklığı

-40°C~150°C TJ

Rds On Max Id Vgs

180m Ω @ 5.6A, 10V

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

56 mJ

Terminal Pozisyonu

SINGLE

Vgs Max

±20V

Ambalaj

Tube

Power Dissipation Max

26W Tc

Nem Hassasiyeti (MSL)

Not Applicable