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IPA60R125C6XKSA1

Infineon Technologies

IPA60R125C6XKSA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Terminal Sayısı
3
Drive Voltage Max Rds On Min Rds On
10V
Pulsed Drain Currentmax Idm
89A
Pin Sayısı
3
Halogen Free
Halogen Free
Montaj
Through Hole
Number Of Elements
1
Fall Time Typ
7 ns
Yayın Yılı
2006
Fet Type
N-Channel
JESD-609 Kodu
e3
Jedec95 Code
TO-220AB
Rise Time
12ns
Power Dissipation
34W
Gate Charge Qg Max Vgs
96nC @ 10V
Fabrika Tedarik Süresi
12 Weeks
Case Connection
ISOLATED
Max Dual Supply Voltage
600V
Radyasyon Dayanımı
No
Parça Durumu
Not For New Designs
Kurşunsuz
Lead Free
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Continuous Drain Current Id
30A
Kılıf / Paket
TO-220-3 Full Pack
Gate To Source Voltage Vgs
20V
Transistor Application
SWITCHING
Çalışma Sıcaklığı
-55°C~150°C TJ
Seri
CoolMOS™
Rds On Max Id Vgs
125m Ω @ 14.5A, 10V
Turn On Delay Time
15 ns
Vgs Max
±20V
Terminal Pozisyonu
SINGLE
Power Dissipation Max
34W Tc
Ambalaj
Tube
Nem Hassasiyeti (MSL)
1 (Unlimited)
Input Capacitance Ciss Max Vds
2127pF @ 100V
Current Continuous Drain Id25
30A Tc
Transistor Element Material
SILICON
Pin Sayısı
3

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