IPA60R120P7XKSA1

Specifications

Ambalaj

Tube

Power Dissipation Max

28W Tc

Nem Hassasiyeti (MSL)

Not Applicable

Rds On Max Id Vgs

120m Ω @ 8.2A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™ P7

Transistor Application

SWITCHING

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

82 mJ

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

4V @ 410μA

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

1544pF @ 400V

Current Continuous Drain Id25

26A Tc

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Ds Breakdown Voltagemin

600V

Pulsed Drain Currentmax Idm

78A

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

ISOLATED

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

36nC @ 10V

Drain To Source Voltage Vdss

600V

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Yayın Yılı

2014

Drainsource On Resistancemax

0.12Ohm

Yüzey Montaj

NO

Jedec95 Code

TO-220AB

JESD-609 Kodu

e3

Fet Type

N-Channel

ECCN Kodu

EAR99