IAUT150N10S5N035ATMA1

Specifications

Rds On Max Id Vgs

3.5m Ω @ 75A, 10V

Drain To Source Voltage Vdss

100V

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.0035Ohm

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

600A

Drain Currentmax Abs Id

150A

Terminal Formu

FLAT

Avalanche Energy Rating Eas

210 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

87nC @ 10V

Fet Type

N-Channel

Reference Standard

AEC-Q101

Power Dissipation Max

166W Tc

Kılıf / Paket

8-PowerSFN

Input Capacitance Ciss Max Vds

6110pF @ 50V

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

6V 10V

Vgsth Max Id

3.8V @ 110μA

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

2

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

20 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Yüzey Montaj

YES

JESD-609 Kodu

e3

Parça Durumu

Active

Vgs Max

±20V

Ds Breakdown Voltagemin

100V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2017

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Seri

OptiMOS™-5