BSZ900N20NS3GATMA1

Specifications

Halogen Free

Halogen Free

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

NO LEAD

Drainsource On Resistancemax

0.09Ohm

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

REACH Uyumluluk Kodu

not_compliant

Input Capacitance Ciss Max Vds

920pF @ 100V

Continuous Drain Current Id

15.2A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn Off Delay Time

10 ns

Jesd30 Code

S-PDSO-N5

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Rds On Max Id Vgs

90m Ω @ 7.6A, 10V

Kurşunsuz Kodu

no

Fet Type

N-Channel

Turn On Delay Time

5 ns

Rise Time

4ns

Power Dissipation

62.5W

Drive Voltage Max Rds On Min Rds On

10V

Contact Plating

Tin

Current Continuous Drain Id25

15.2A Tc

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

11.6nC @ 10V

Kılıf / Paket

8-PowerTDFN

Vgs Max

±20V

Kurşunsuz

Contains Lead

Yayın Yılı

2005

Pin Sayısı

8

Fabrika Tedarik Süresi

18 Weeks

Max Dual Supply Voltage

200V

Qualification Status

Not Qualified

Terminal Sayısı

5

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3