BSZ440N10NS3GATMA1

Specifications

Gate Charge Qg Max Vgs

9.1nC @ 10V

Kılıf / Paket

8-PowerTDFN

Vgs Max

±20V

Rds On Max Id Vgs

44m Ω @ 12A, 10V

Kurşunsuz Kodu

no

Fet Type

N-Channel

Turn On Delay Time

4.3 ns

Rise Time

1.8ns

Power Dissipation

29W

Drive Voltage Max Rds On Min Rds On

6V 10V

Gate To Source Voltage Vgs

20V

Current Continuous Drain Id25

5.3A Ta 18A Tc

Pulsed Drain Currentmax Idm

72A

Input Capacitance Ciss Max Vds

640pF @ 50V

Continuous Drain Current Id

5.3A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

S-PDSO-N5

Turn Off Delay Time

9.1 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

DRAIN

Terminal Formu

NO LEAD

Drainsource On Resistancemax

0.044Ohm

ECCN Kodu

EAR99

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Fall Time Typ

2 ns

Montaj Tipi

Surface Mount

Number Of Elements

1

Seri

OptiMOS™

Vgsth Max Id

2.7V @ 12μA

Pin Sayısı

8

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ