BSZ300N15NS5ATMA1

Specifications

Gate Charge Qg Max Vgs

13nC @ 10V

Kılıf / Paket

8-PowerTDFN

Yüzey Montaj

YES

Vgs Max

±20V

Number Of Elements

1

Montaj Tipi

Surface Mount

Seri

OptiMOS™

Vgsth Max Id

4.6V @ 32μA

JESD-609 Kodu

e3

Rds On Max Id Vgs

30m Ω @ 16A, 10V

Power Dissipation Max

62.5W Tc

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Current Continuous Drain Id25

32A Tc

Drive Voltage Max Rds On Min Rds On

8V 10V

Ds Breakdown Voltagemin

150V

Pulsed Drain Currentmax Idm

128A

Input Capacitance Ciss Max Vds

950pF @ 75V

Fabrika Tedarik Süresi

18 Weeks

Terminal Sayısı

3

Jesd30 Code

S-PDSO-N3

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin (Sn)

Avalanche Energy Rating Eas

30 mJ

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Terminal Formu

NO LEAD

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

DRAIN

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.03Ohm

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

150V

Yayın Yılı

2015

Drain Currentmax Abs Id

32A