BSZ22DN20NS3GATMA1

Specifications

Case Connection

DRAIN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

NO LEAD

Halogen Free

Halogen Free

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

30 mJ

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.225Ohm

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

430pF @ 100V

Continuous Drain Current Id

7A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Jesd30 Code

S-PDSO-N5

Fet Type

N-Channel

Rds On Max Id Vgs

225m Ω @ 3.5A, 10V

Kurşunsuz Kodu

no

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

7A Tc

Gate To Source Voltage Vgs

20V

Rise Time

4ns

Power Dissipation

34W

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

5.6nC @ 10V

Vgs Max

±20V

Kurşunsuz

Contains Lead

Yayın Yılı

2011

Drain Currentmax Abs Id

7A

Fabrika Tedarik Süresi

18 Weeks

Max Dual Supply Voltage

200V

Pin Sayısı

8

Terminal Kaplaması

Tin (Sn)

Terminal Pozisyonu

DUAL

Qualification Status

Not Qualified

Terminal Sayısı

5

Çalışma Sıcaklığı

-55°C~150°C TJ