BSZ150N10LS3GATMA1

Specifications

Threshold Voltage

1.7V

Drainsource On Resistancemax

0.02Ohm

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Contact Plating

Tin

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

Yayın Yılı

2013

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Power Dissipation Max

2.1W Ta 63W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

35nC @ 10V

Terminal Formu

NO LEAD

Rise Time

4.6ns

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Drain To Source Breakdown Voltage

100V

Fabrika Tedarik Süresi

18 Weeks

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Max Dual Supply Voltage

100V

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

2500pF @ 50V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

40A Tc

Halogen Free

Halogen Free

Kılıf / Paket

8-PowerTDFN

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

S-PDSO-N5

Pin Sayısı

8

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)