BSZ130N03MSGATMA1

Specifications

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Number Of Elements

1

Additional Feature

AVALANCHE RATED

Gate Charge Qg Max Vgs

17nC @ 10V

Terminal Formu

NO LEAD

Drain To Source Voltage Vdss

30V

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.1W Ta 25W Tc

Terminal Sayısı

5

Yayın Yılı

2000

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Ds Breakdown Voltagemin

30V

Drainsource On Resistancemax

0.015Ohm

Fet Type

N-Channel

Case Connection

DRAIN

JESD-609 Kodu

e3

Qualification Status

Not Qualified

Yüzey Montaj

YES

Rds On Max Id Vgs

11.5m Ω @ 20A, 10V

Seri

OptiMOS™

Vgsth Max Id

2V @ 250μA

Pulsed Drain Currentmax Idm

140A

Kurşunsuz Kodu

no

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Avalanche Energy Rating Eas

9 mJ

Kılıf / Paket

8-PowerTDFN

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

S-PDSO-N5