Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Contact Plating
- Tin
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.0037Ohm
- Fet Type
- N-Channel
- Case Connection
- DRAIN
- Montaj
- Surface Mount
- Terminal Pozisyonu
- DUAL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation Max
- 2.5W Ta 48W Tc
- Terminal Sayısı
- 3
- Yayın Yılı
- 2011
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Rise Time
- 5.4ns
- Gate Charge Qg Max Vgs
- 24nC @ 10V
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 18 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Max Dual Supply Voltage
- 30V
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Contains Lead
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Input Capacitance Ciss Max Vds
- 1500pF @ 15V
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 21A Ta 40A Tc
- Halogen Free
- Halogen Free
- Power Dissipation
- 2.5W
- Pin Sayısı
- 8
- Kılıf / Paket
- 8-PowerTDFN
- Pin Sayısı
- 8
- Jesd30 Code
- S-PDSO-N3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgs Max
- ±20V
- Avalanche Energy Rating Eas
- 30 mJ
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 2.8m Ω @ 30A, 10V
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