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BSZ0901NSATMA1

Infineon Technologies

BSZ0901NSATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Montaj Tipi
Surface Mount
Terminal Kaplaması
Tin (Sn)
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz
Contains Lead
Transistor Element Material
SILICON
Operating Mode
ENHANCEMENT MODE
Number Of Elements
1
Gate Charge Qg Max Vgs
45nC @ 10V
Terminal Formu
NO LEAD
Configuration
SINGLE WITH BUILT-IN DIODE
Terminal Pozisyonu
DUAL
Ambalaj
Tape & Reel (TR)
Terminal Sayısı
3
Yayın Yılı
2013
RoHS Durumu
ROHS3 Compliant
Fet Type
N-Channel
Drainsource On Resistancemax
0.0026Ohm
Gate To Source Voltage Vgs
20V
Turn Off Delay Time
27 ns
Fall Time Typ
4.6 ns
Vgsth Max Id
2.2V @ 250μA
Pin Sayısı
8
Halogen Free
Halogen Free
Current Continuous Drain Id25
22A Ta 40A Tc
Transistor Application
SWITCHING
Max Dual Supply Voltage
30V
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Turn On Delay Time
5 ns
Fabrika Tedarik Süresi
18 Weeks
Rise Time
7.2ns
Power Dissipation Max
2.1W Ta 50W Tc
Çalışma Sıcaklığı
-55°C~150°C TJ
Montaj
Surface Mount
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Parça Durumu
Active
Case Connection
DRAIN
Continuous Drain Current Id
25A
JESD-609 Kodu
e3
Kurşunsuz Kodu
no
Pulsed Drain Currentmax Idm
160A

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