BSZ086P03NS3EGATMA1

Specifications

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

-30V

Transistor Element Material

SILICON

Number Of Elements

1

Yükseklik

1.1mm

Gate Charge Qg Max Vgs

57.5nC @ 10V

Terminal Formu

NO LEAD

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Yayın Yılı

2008

Terminal Sayısı

5

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Threshold Voltage

-2.5V

Fet Type

P-Channel

Reach Svhc

No SVHC

Turn Off Delay Time

35 ns

Gate To Source Voltage Vgs

25V

Fall Time Typ

8 ns

Vgsth Max Id

3.1V @ 105μA

Pin Sayısı

8

Halogen Free

Halogen Free

Power Dissipation

69W

Current Continuous Drain Id25

13.5A Ta 40A Tc

Transistor Application

SWITCHING

Max Dual Supply Voltage

-30V

Drive Voltage Max Rds On Min Rds On

6V 10V

Fabrika Tedarik Süresi

18 Weeks

Turn On Delay Time

16 ns

Additional Feature

ESD PROTECTED

Rise Time

46ns

Drain To Source Voltage Vdss

30V

Number Of Channels

1

Power Dissipation Max

2.1W Ta 69W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount