BSZ084N08NS5ATMA1

Specifications

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

76 mJ

Vgs Max

±20V

Pin Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

S-PDSO-N3

Kılıf / Paket

8-PowerTDFN

Continuous Drain Current Id

40A

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

25 ns

Vgsth Max Id

3.8V @ 31μA

Kurşunsuz Kodu

yes

Fall Time Typ

5 ns

Rds On Max Id Vgs

8.4m Ω @ 20A, 10V

Seri

OptiMOS™

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

1820pF @ 40V

Halogen Free

Halogen Free

Current Continuous Drain Id25

40A Tc

Number Of Elements

1

Rise Time

5ns

Gate Charge Qg Max Vgs

25nC @ 10V

Terminal Formu

NO LEAD

Montaj Tipi

Surface Mount

Max Dual Supply Voltage

80V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

6V 10V

Kurşunsuz

Contains Lead

Turn On Delay Time

13 ns

Fabrika Tedarik Süresi

18 Weeks

Drain To Source Breakdown Voltage

80V

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Case Connection

DRAIN

Fet Type

N-Channel