BSZ075N08NS5ATMA1

Specifications

Fall Time Typ

4 ns

Kurşunsuz Kodu

yes

Vgsth Max Id

3.8V @ 36μA

Rds On Max Id Vgs

7.5m Ω @ 20A, 10V

Seri

OptiMOS™

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

19 ns

Continuous Drain Current Id

40A

Jesd30 Code

S-PDSO-N3

Pin Sayısı

8

Kılıf / Paket

8-PowerTDFN

Vgs Max

±20V

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

40A Tc

ECCN Kodu

EAR99

Power Dissipation

69W

Halogen Free

Halogen Free

Input Capacitance Ciss Max Vds

2080pF @ 40V

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

10 ns

Fabrika Tedarik Süresi

18 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

6V 10V

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Max Dual Supply Voltage

80V

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

29.5nC @ 10V

Rise Time

4ns

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2013

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

69W Tc

Terminal Pozisyonu

DUAL

Case Connection

DRAIN