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C3 ChipZentronix
BSZ050N03LSGATMA1

Infineon Technologies

BSZ050N03LSGATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Genuine parts

Verified sourcing

RoHS

Compliant

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Specifications

Case Connection
DRAIN
Fet Type
N-Channel
Parça Durumu
Active
Contact Plating
Tin
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Montaj
Surface Mount
Terminal Sayısı
5
Yayın Yılı
2005
Ambalaj
Tape & Reel (TR)
Terminal Pozisyonu
DUAL
Çalışma Sıcaklığı
-55°C~150°C TJ
Power Dissipation Max
2.1W Ta 50W Tc
Configuration
SINGLE WITH BUILT-IN DIODE
Gate Charge Qg Max Vgs
35nC @ 10V
Terminal Formu
NO LEAD
Rise Time
4ns
Number Of Elements
1
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Operating Mode
ENHANCEMENT MODE
Transistor Element Material
SILICON
Fabrika Tedarik Süresi
18 Weeks
Kurşunsuz
Contains Lead
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Max Dual Supply Voltage
30V
Montaj Tipi
Surface Mount
Input Capacitance Ciss Max Vds
2800pF @ 15V
Transistor Application
SWITCHING
ECCN Kodu
EAR99
Current Continuous Drain Id25
16A Ta 40A Tc
Halogen Free
Halogen Free
Power Dissipation
50W
Pin Sayısı
8
Drain Currentmax Abs Id
40A
Kılıf / Paket
8-PowerTDFN
Pin Sayısı
8
Jesd30 Code
R-PDSO-N5
Vgs Max
±20V
Avalanche Energy Rating Eas
70 mJ

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