BSZ0503NSIATMA1

Specifications

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

20nC @ 10V

Number Of Elements

1

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Max Dual Supply Voltage

30V

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0042Ohm

Case Connection

DRAIN

Fet Type

N-Channel

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.1W Ta 36W Tc

Terminal Sayısı

3

Yayın Yılı

2013

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

8-PowerTDFN

Jesd30 Code

S-PDSO-N3

Pin Sayısı

8

Drain Currentmax Abs Id

20A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Avalanche Energy Rating Eas

20 mJ

Rds On Max Id Vgs

3.4m Ω @ 20A, 10V

Seri

OptiMOS™

Kurşunsuz Kodu

yes

Pulsed Drain Currentmax Idm

160A

Vgsth Max Id

2V @ 250μA

Continuous Drain Current Id

40A

Input Capacitance Ciss Max Vds

1300pF @ 15V

Transistor Application

SWITCHING