BSZ0501NSIATMA1

Specifications

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Max Dual Supply Voltage

30V

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

33nC @ 10V

Number Of Elements

1

Terminal Pozisyonu

DUAL

Power Dissipation Max

2.1W Ta 50W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2013

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0025Ohm

Case Connection

DRAIN

Fet Type

N-Channel

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

OptiMOS™

Rds On Max Id Vgs

2m Ω @ 20A, 10V

Pulsed Drain Currentmax Idm

160A

Kurşunsuz Kodu

yes

Vgsth Max Id

2V @ 250μA

Continuous Drain Current Id

40A

Kılıf / Paket

8-PowerTDFN

Pin Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

S-PDSO-N3

Drain Currentmax Abs Id

25A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Avalanche Energy Rating Eas

40 mJ

Current Continuous Drain Id25

25A Ta 40A Tc