BSZ035N03MSGATMA1

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Jesd30 Code

R-PDSO-C5

Kılıf / Paket

8-PowerTDFN

Continuous Drain Current Id

18A

Qualification Status

Not Qualified

Kurşunsuz Kodu

no

Seri

OptiMOS™

Rds On Max Id Vgs

3.5m Ω @ 20A, 10V

Input Capacitance Ciss Max Vds

5700pF @ 15V

Pin Sayısı

8

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED

Rise Time

5.8ns

Drain To Source Voltage Vdss

30V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn On Delay Time

10 ns

Fabrika Tedarik Süresi

18 Weeks

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

2.1W Ta 69W Tc

Pin Sayısı

8

Reach Svhc

No SVHC

Turn Off Delay Time

38 ns

Gate To Source Voltage Vgs

20V

Fall Time Typ

4.8 ns

Vgsth Max Id

2V @ 250μA

Transistor Application

SWITCHING

Power Dissipation

2.1W

Current Continuous Drain Id25

18A Ta 40A Tc

Number Of Elements

1

Gate Charge Qg Max Vgs

74nC @ 10V

Terminal Formu

C BEND

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE