BSZ034N04LSATMA1

Specifications

Vgsth Max Id

2V @ 250μA

Pulsed Drain Currentmax Idm

160A

Rds On Max Id Vgs

3.4m Ω @ 20A, 10V

Seri

Automotive, AEC-Q101, OptiMOS™

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3

Continuous Drain Current Id

40A

Drain Currentmax Abs Id

19A

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

S-PDSO-N3

Pin Sayısı

8

Kılıf / Paket

8-PowerTDFN

Avalanche Energy Rating Eas

70 mJ

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

19A Ta 40A Tc

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Input Capacitance Ciss Max Vds

1800pF @ 20V

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Max Dual Supply Voltage

40V

Gate Charge Qg Max Vgs

25nC @ 10V

Terminal Formu

NO LEAD

Rise Time

4ns

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2012

Terminal Sayısı

3

Power Dissipation Max

2.1W Ta 52W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE