BSZ019N03LSATMA1

Specifications

Terminal Sayısı

3

Yayın Yılı

2011

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Configuration

SINGLE WITH BUILT-IN DIODE

Threshold Voltage

2V

Drainsource On Resistancemax

0.0025Ohm

Fet Type

N-Channel

Ds Breakdown Voltagemin

30V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Surface Mount

Terminal Formu

NO LEAD

Gate Charge Qg Max Vgs

44nC @ 10V

Number Of Elements

1

Current Continuous Drain Id25

22A Ta . 40A Tc

Power Dissipation

69W

Transistor Application

SWITCHING

Vgsth Max Id

2V @ 250μA

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Pin Sayısı

8

Power Dissipation Max

2.1W Ta 69W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Case Connection

DRAIN

Contact Plating

Tin

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount

Fabrika Tedarik Süresi

18 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drain To Source Voltage Vdss

30V

Rise Time

6.8ns

ECCN Kodu

EAR99

Pin Sayısı

8

Input Capacitance Ciss Max Vds

2800pF @ 15V

Seri

OptiMOS™

Rds On Max Id Vgs

1.9m Ω @ 20A, 10V