BSS84PH6327XTSA2

Specifications

Yükseklik

900μm

Input Capacitance Ciss Max Vds

19pF @ 25V

Terminal Pozisyonu

DUAL

Genişlik

1.3mm

Number Of Elements

1

Seri

SIPMOS®

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

170mA Ta

Continuous Drain Current Id

170mA

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Element Material

SILICON

Fet Type

P-Channel

Nominal Vgs

-1.5 V

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Akım

17A

Contact Plating

Tin

Yayın Yılı

2002

Vgsth Max Id

2V @ 20μA

Uzunluk

2.9mm

Element Configuration

Single

Fabrika Tedarik Süresi

10 Weeks

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Montaj Tipi

Surface Mount

Parça Durumu

Active

Montaj

Surface Mount

Pin Sayısı

3

Turn Off Delay Time

8.6 ns

Number Of Channels

1

Terminal Formu

GULL WING

Turn On Delay Time

6.7 ns

Rds On Max Id Vgs

8 Ω @ 170mA, 10V

Direnç

12Ohm

Gate Charge Qg Max Vgs

1.5nC @ 10V

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

360mW