BSS84P-E6327

Specifications

Pin Sayısı

3

Drainsource On Resistancemax

8Ohm

Power Dissipation Max

360mW Ta

Kurşunsuz

Contains Lead

Ambalaj

Tape & Reel (TR)

Power Dissipation

360mW

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

40

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

P-Channel

Vgs Max

±20V

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Yayın Yılı

2002

Terminal Sayısı

3

Rise Time

16.2ns

Vgsth Max Id

2V @ 20μA

REACH Uyumluluk Kodu

unknown

Number Of Elements

1

Qualification Status

Not Qualified

Parça Durumu

Obsolete

Seri

SIPMOS®

Operating Mode

ENHANCEMENT MODE

Forward Voltage

-930mV

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

19pF @ 25V

Terminal Pozisyonu

DUAL

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Rds On Max Id Vgs

8 Ω @ 170mA, 10V

Drain To Source Voltage Vdss

60V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

1.5nC @ 10V

Voltage Rated Dc

-60V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

20V

Akım Değeri

-170mA