BSS806NEH6327XTSA1

Specifications

Fabrika Tedarik Süresi

10 Weeks

JESD-609 Kodu

e3

Contact Plating

Tin

Yayın Yılı

2013

Element Configuration

Single

Uzunluk

2.9mm

Vgsth Max Id

0.75V @ 11μA

Drainsource On Resistancemax

0.057Ohm

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Additional Feature

AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

1.8V 2.5V

Continuous Drain Current Id

2.3A

Current Continuous Drain Id25

2.3A Ta

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Seri

Automotive, AEC-Q101, HEXFET®

Operating Mode

ENHANCEMENT MODE

Yükseklik

1mm

Input Capacitance Ciss Max Vds

529pF @ 10V

Terminal Pozisyonu

DUAL

Genişlik

1.3mm

ECCN Kodu

EAR99

Feedback Capmax Crss

29 pF

Rise Time

9.9ns

Terminal Sayısı

3

Halogen Free

Halogen Free

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes

Power Dissipation Max

500mW Ta

Power Dissipation

500mW

RoHS Durumu

ROHS3 Compliant

Vgs Max

±8V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Max Dual Supply Voltage

20V

Turn On Delay Time

7.5 ns

Terminal Formu

GULL WING