BSS306NH6327XTSA1

Specifications

Yükseklik

1.1mm

Input Capacitance Ciss Max Vds

275pF @ 15V

Terminal Pozisyonu

DUAL

Number Of Elements

1

Seri

OptiMOS™

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

2.3A

Current Continuous Drain Id25

2.3A Ta

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Element Material

SILICON

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.057Ohm

Ambalaj

Tape & Reel (TR)

Contact Plating

Tin

Yayın Yılı

2011

Vgsth Max Id

2V @ 11μA

Fabrika Tedarik Süresi

10 Weeks

JESD-609 Kodu

e3

Max Junction Temperature Tj

150°C

Radyasyon Dayanımı

No

Montaj Tipi

Surface Mount

Parça Durumu

Active

Montaj

Surface Mount

Pin Sayısı

3

Turn Off Delay Time

8.3 ns

Drain To Source Breakdown Voltage

30V

Number Of Channels

1

Turn On Delay Time

4.4 ns

Terminal Formu

GULL WING

Rds On Max Id Vgs

57m Ω @ 2.3A, 10V

Gate Charge Qg Max Vgs

1.5nC @ 5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

20V

Power Dissipation

500mW

RoHS Durumu

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs Max

±20V

Max Dual Supply Voltage

30V