BSS225H6327FTSA1

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

90mA

Current Continuous Drain Id25

90mA Ta

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Voltage Rated Dc

600V

Akım Değeri

90mA

Additional Feature

LOGIC LEVEL COMPATIBLE

Genişlik

2.5mm

Input Capacitance Ciss Max Vds

131pF @ 25V

Yükseklik

1.5mm

Seri

SIPMOS®

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Uzunluk

4.5mm

Element Configuration

Single

Vgsth Max Id

2.3V @ 94μA

Contact Plating

Tin

Yayın Yılı

2011

Fabrika Tedarik Süresi

10 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel

Transistor Element Material

SILICON

Ambalaj

Cut Tape (CT)

Drain To Source Breakdown Voltage

600V

Turn Off Delay Time

62 ns

Pin Sayısı

3

Case Connection

DRAIN

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

5.8nC @ 10V

Rds On Max Id Vgs

45 Ω @ 90mA, 10V

Terminal Formu

FLAT

Turn On Delay Time

14 ns

Montaj Tipi

Surface Mount

Parça Durumu

Active

Fall Time Typ

41 ns

Terminal Sayısı

3

Rise Time

38ns